▎ 摘　　要

We present prominent tunable and switchable room-temperature rectification performed at 100 kHz ac input utilizing micrometer-scale three-terminal junction field-effect devices. Monolayer CVD graphene is used as both a channel and a gate electrode to achieve all-graphene thin-film structure. Instead of ballistic theory, we explain the rectification characteristics through an electric-field capacitive model based on self-gating in the high source drain bias regime. Previously, nanoscale graphene three-terminal junctions with the ballistic (or quasi-ballistic) operation have shown rectifications with relatively low efficiency. Compared to strict nanoscale requirements of ballistic devices, diffusive operation gives more freedom in design and fabrication, which we have exploited in the cascading device architecture. This is a significant step for all-graphene thin-film devices for integrated monolithic graphene circuits.