▎ 摘　　要

The graphene, as a one atomic-layer material, is very sensitive to the environment and easy to be polluted. Here, we propose an in situ fabrication and characterization method for graphene electronic devices using the Dual Beam system. Instead of the conventional photo/e-beam lithography, plasma etching and lift-off techniques, the focused ion beam (FIB) is employed to pattern the graphene and the e-beam induced deposition of platinum (Pt) is adopted to fabricate the electrodes. Using the nano-probes in the specimen chamber, we obtained the typical electronic bipolar behavior of graphene in situ both with the Pt/graphene contact and the nano-probes/graphene direct contact. In the whole process of the fabrication and characterization, the graphene sample is kept in high vacuum condition all the time.