• 文献标题:   Hydrothermal synthesis of self-assembled potassium-doped Graphene semiconducting nanoparticles for p-Si/n-Graphene junction diode applications
  • 文献类型:   Article
  • 作  者:   SUMATHI N, DHANEMOZHI AC, THANGARAJU D, ADEWINBI SA, MOHANRAJ K, MARNADU R, SHKIR M
  • 作者关键词:   graphene nanoparticle, psi/ngraphene diode, hydrothermal route, iv characteristic
  • 出版物名称:   SURFACES INTERFACES
  • ISSN:   2468-0230
  • 通讯作者地址:  
  • 被引频次:   5
  • DOI:   10.1016/j.surfin.2021.101408 EA SEP 2021
  • 出版年:   2021

▎ 摘  要

We have synthesized graphene nanoparticles (NPs) by the hydrothermal route using carbon tetrachloride organic solvent for various temperatures like 140, 160, and 180 degrees C in this work. The structural, morphological, optical, and electrical properties of the prepared NPs were studied by advanced techniques such as XRD, SEM with EDX, TEM, AFM, UV, PL, and I-V characteristics. The XRD pattern reveals the hexagonal crystal structure. The SEM image showed textured sheet-like layers which got agglomerated to form fluffy structures. The TEM images recorded single-crystalline nature with spiral spherical shape graphene NPs. The topography images (AFM) reveal the hydrothermal temperature treated influenced the graphene NPs growth. The bandgap of graphene NPS is estimated between 2.02 and 2.32 eV, respectively. All the p-Si/n-Graphene diodes exhibited good rectification nature with less reverse current. The higher temperature achieved minimum n values with higher barrier height. We imply that the p-Si/n-Graphene diode is highly sensitive to synthesize temperature.