▎ 摘　　要

Graphene synthesis was performed on Fe foil at low temperature. A 100 mu m-thick Fe foil as a catalyst and acetylene as a hydrocarbon source were used for graphene growth. With a low acetylene flow rate (5 sccm) and short exposure time (5 min), single-to few-layer graphene sheets partially covering the Fe substrate were obtained. With sufficient exposure times (15-30 min), and acetylene flow rates (25-50 sccm), continuous graphene layers were obtained at temperatures ranging from 600 degrees C to 800 degrees C. The measured Raman spectra showed that defects decreased with an increasing synthesis temperature. Even though the 2D and G peak intensities of the Raman spectrum appeared to be similar, the thickness of the graphene layers synthesized at 700 degrees C and 750 degrees C was measured to be as thick as similar to 15 nm and similar to 29 nm, respectively. Considering that the estimated number of graphene layers should be less than 2-3 without creating stacking disorder between the interlayers, it appears that an ordered stacking, (i.e., ABAB stacking) and therefore electronic coupling between layers, may not occur in the synthesized graphene layers on Fe foil under those process conditions. (C) 2011 Elsevier B.V. All rights reserved.