▎ 摘　　要

Remote epitaxy via graphene has recently attracted significant attention, since it provides the possibility to lift-off the grown epitaxial layer, reuse the substrate, and produce flexible devices. However, extensive research is still necessary to fully understand the III-nitride formation on the van der Waals surface of a two-dimensional material and utilize remote epitaxy to its full potential. In this work, the growth of a GaN epilayer using a GaN/sapphire template covered with monolayer graphene is presented. Metalorganic vapor phase epitaxy is chosen to fabricate both the template and the nitride epilayer on top as a cost-effective approach toward GaN homoepitaxy. One-step and multi-step growth temperature protocols are demonstrated while paying particular attention to the graphene interface. GaN seed formation on graphene is analyzed to identify remote epitaxy. Crystalline quality improvement of the epilayer by adjusting the growth parameters is further discussed to provide useful insights into GaN growth on a GaN/sapphire template via monolayer graphene.