▎ 摘　　要

Single-layer graphene (SLG) was synthesized by using chemical vapor deposition (CVD) technique. A novel method was developed to disperse the as-synthesized SLG in poly (methyl methacrylate) (PMMA) matrix. Current-voltage measurements on the Al/SLG:PMMA/Al devices showed rewritable resistance switch properties with volatile memory effect due to the existence of the graphene sheets. The operating mechanisms for the resistance switch effect of SLG:PMMA nanocomposite layer were discussed based on the electron-trapping effect and electric-screen effect of graphene. The SLG:PMMA nanocomposite holds promise for application in dynamic random access memory. (C) 2013 Elsevier Ltd. All rights reserved.