• 文献标题:   Bilayer graphene by bonding CVD graphene to epitaxial graphene
  • 文献类型:   Article
  • 作  者:   JERNIGAN GG, ANDERSON TJ, ROBINSON JT, CALDWELL JD, CULBERTSON JC, MYERSWARD R, DAVIDSON AL, ANCONA MG, WHEELER VD, NYAKITI LO, FRIEDMAN AL, CAMPBELL PM, GASKILL DK
  • 作者关键词:  
  • 出版物名称:   JOURNAL OF VACUUM SCIENCE TECHNOLOGY B
  • ISSN:   2166-2746
  • 通讯作者地址:   USN
  • 被引频次:   9
  • DOI:   10.1116/1.3701700
  • 出版年:   2012

▎ 摘  要

A novel method for creating bilayer graphene is described where single-layer CVD graphene grown on Cu is bonded to single-layer epitaxial graphene grown on Si-face SIC. Raman microscopy and x ray photoelectron spectroscopy demonstrate the uniqueness of this bilayer, as compared to a naturally formed bilayer, in that a Bernal stack is not formed with each layer being strained differently yet being closely coupled. Electrical characterization of Hall devices fabricated on the unusual bilayer show higher mobilities, and lower carrier concentrations, than the individual CVD graphene or epitaxial graphene layers. [http://dx.doi.org/10.1116/1.3701700]