• 文献标题:   Ab initio study of the interactions between boron and nitrogen dopants in graphene
  • 文献类型:   Article
  • 作  者:   AIAQTASH N, ALTARAWNEH KM, TAWALBEH T, VASILIEV I
  • 作者关键词:  
  • 出版物名称:   JOURNAL OF APPLIED PHYSICS
  • ISSN:   0021-8979 EI 1089-7550
  • 通讯作者地址:   New Mexico State Univ
  • 被引频次:   23
  • DOI:   10.1063/1.4742063
  • 出版年:   2012

▎ 摘  要

We present a first-principles computational study of the interactions between the boron (B) and nitrogen (N) dopant atoms in graphene. Our calculations are carried out using density functional theory combined with the generalized gradient approximation for the exchange-correlation functional. The total energies, equilibrium geometries, electronic charge distributions, and densities of states of doped graphene sheets are examined in cases of B B, N N, and B N co-doped graphene. We find the B B and N N interactions to be repulsive and the B N interaction to be attractive. In all cases studied, dopant-dopant interactions appear to have a relatively short range. The interaction energy between the two dopant atoms is found to be inversely proportional to the square of the separation distance. We interpret these results in terms of donor-acceptor interactions and structural relaxation. The strong bonding between the B and N atoms indicates the possibility of the formation of isolated patches of hexagonal boron nitride in B N co-doped graphene. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4742063]