• 文献标题:   Edge dopant energy levels of graphene nanoribbons
  • 文献类型:   Article
  • 作  者:   LU Y, GUO J
  • 作者关键词:  
  • 出版物名称:   APPLIED PHYSICS LETTERS
  • ISSN:   0003-6951
  • 通讯作者地址:   Univ Florida
  • 被引频次:   2
  • DOI:   10.1063/1.3489690
  • 出版年:   2010

▎ 摘  要

Edge doping of graphene flakes and graphene nanoribbons (GNRs) was achieved in recent experiments. Atomistic self-consistent simulations are performed in this study to compute the edge dopant energy levels of GNRs. The results indicate that the energy required to ionize the edge dopant in a sub-10 nm wide GNR increases considerably as the GNR width decreases and it is sensitive to electrostatic environment such as the substrate and gate insulator materials. These unusual behaviors of dopants in a GNR are due to its quasi-one-dimensional structure and monolayer-thin body. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3489690]