• 文献标题:   Bandgap opening in boron nitride confined armchair graphene nanoribbon
  • 文献类型:   Article
  • 作  者:   SEOL G, GUO J
  • 作者关键词:  
  • 出版物名称:   APPLIED PHYSICS LETTERS
  • ISSN:   0003-6951 EI 1077-3118
  • 通讯作者地址:   Univ Florida
  • 被引频次:   60
  • DOI:   10.1063/1.3571282
  • 出版年:   2011

▎ 摘  要

Graphene nanoribbons (GNRs) have seized strong interest. Recent studies show that domains of graphene in monolayer hexagonal boron nitride (h-BN) can be synthesized. Using the first principle calculations we have studied the electronic properties of armchair GNRs (AGNRs) confined by BN nanoribbons (BNNRs). While, H-terminated AGNRs have a close to zero bandgap with the width index of 3p+2, AGNRs confined by BNNRs exhibit a considerable bandgap. The bandgap opening is primarily due to perturbation to the on-site potentials of atoms at AGNR edges. A tight binding model is parameterized to confirm this mechanism and enable future device studies. (C) 2011 American Institute of Physics. [doi:10.1063/1.3571282]