• 文献标题:   Antiferromagnetic states and phase separation in doped AA-stacked graphene bilayers
  • 文献类型:   Article
  • 作  者:   SBOYCHAKOV AO, ROZHKOV AV, RAKHMANOV AL, NORI F
  • 作者关键词:  
  • 出版物名称:   PHYSICAL REVIEW B
  • ISSN:   1098-0121
  • 通讯作者地址:   RIKEN
  • 被引频次:   16
  • DOI:   10.1103/PhysRevB.88.045409
  • 出版年:   2013

▎ 摘  要

We study electronic properties of AA-stacked graphene bilayers. In the single-particle approximation such a system has one electron band and one hole band crossing the Fermi level. If the bilayer is undoped, the Fermi surfaces of these bands coincide. Such a band structure is unstable with respect to a set of spontaneous symmetry violations. Specifically, strong on-site Coulomb repulsion stabilizes antiferromagnetic order. At small doping and low temperatures, the homogeneous phase is unstable and experiences phase separation into an undoped antiferromagnetic insulator and a metal. The metallic phase can be either antiferromagnetic (commensurate or incommensurate) or paramagnetic depending on the system parameters. We derive the phase diagram of the system on the doping-temperature plane and find that, under certain conditions, the transition from the paramagnetic to the antiferromagnetic phase may demonstrate reentrance. When disorder is present, phase separation could manifest itself as a percolative insulator-metal transition driven by doping.