• 文献标题:   Negative correlation between charge carrier density and mobility fluctuations in graphene
  • 文献类型:   Article
  • 作  者:   LU JM, PAN J, YEH SS, ZHANG HJ, ZHENG Y, CHEN QH, WANG Z, ZHANG B, LIN JJ, SHENG P
  • 作者关键词:  
  • 出版物名称:   PHYSICAL REVIEW B
  • ISSN:   2469-9950 EI 2469-9969
  • 通讯作者地址:   Hong Kong Univ Sci Technol
  • 被引频次:   8
  • DOI:   10.1103/PhysRevB.90.085434
  • 出版年:   2014

▎ 摘  要

By carrying out simultaneous longitudinal and Hall measurements in graphene, we find that the 1/f noise for the charge carrier density is negatively correlated to that of mobility, with a governing behavior that differs significantly from the relation between their mean values. The correlation in the noise data can be quantitatively explained by a single-parameter theory whose underlying physics is the trapping and detrapping of the fluctuating charge carriers by the oppositely charged Coulomb scattering centers. This can alter the effective density of long-range scattering centers in a transient manner, with the consequent fluctuating effect on the mobility.