• 文献标题:   Probing the Nature of Defects in Graphene by Raman Spectroscopy
  • 文献类型:   Article
  • 作  者:   ECKMANN A, FELTEN A, MISHCHENKO A, BRITNELL L, KRUPKE R, NOVOSELOV KS, CASIRAGHI C
  • 作者关键词:   graphene, raman spectroscopy, defect, conductive afm
  • 出版物名称:   NANO LETTERS
  • ISSN:   1530-6984 EI 1530-6992
  • 通讯作者地址:   Univ Manchester
  • 被引频次:   774
  • DOI:   10.1021/nl300901a
  • 出版年:   2012

▎ 摘  要

Raman spectroscopy is able to probe disorder in graphene through defect-activated peaks. It is of great interest to link these features to the nature of disorder. Here we present a detailed analysis of the Raman spectra of graphene containing different type of defects. We found that the intensity ratio of the D and D' peak is maximum (similar to 13) for sp(3)-defects, it decreases for vacancy-like defects (similar to 7), and it reaches a minimum for boundaries in graphite (similar to 3.5). This makes Raman Spectroscopy a powerful tool to fully characterize graphene.