▎ 摘　　要

To modify the electrical properties of graphene, we have synthesized nitrogen-doped graphene films using pentachloropyridine and methane by a two-step growth process with the N/C ratio of 2.5%-4%. The nitrogen-doped graphene presoma synthesized at 350 degrees C can be transformed into nitrogen-doped graphene fragments by annealing at 1000 degrees C. The introduction of methane as a second carbon source plays a key role in the formation of continuous uniform nitrogen-doped graphene films. The as-obtained N-doped graphene films exhibit n-type conduction with the electron mobility and density of 375 cm(2) V-1 s(-1) and 2.38 x 10(13) cm(-2) at room temperature, respectively. (C) 2015 AIP Publishing LLC.