▎ 摘　　要

Interface engineering in atomically thin transition metal dichalcogenides (TMDs) is becoming an important and powerful technique to alter their properties, enabling new optoelectronic applications and quantum devices. Interface engineering in a monolayer WSe2 sample via introduction of high-density edges of standing structured graphene nanosheets (GNs) is realized. A strong photoluminescence (PL) emission peak from intravalley and intervalley trions at about 750 nm is observed at the room temperature, which indicated the heavily p-type doping of the monolayer WSe2/thin graphene nanosheet-embedded carbon (TGNEC) film heterostructure. We also successfully triggered the emission of biexcitons (excited state biexciton) in a monolayer WSe2, via the electron trapping centers of edge quantum wells of a TGNEC film. The PL emission of a monolayer WSe2/GNEC film is quenched by capturing the photoexcited electrons to reduce the electron-hole recombination rate. This study can be an important benchmark for the extensive understanding of light-matter interaction in TMDs, and their dynamics.