• 文献标题:   Boron nitride substrates for high mobility chemical vapor deposited graphene
  • 文献类型:   Article
  • 作  者:   GANNETT W, REGAN W, WATANABE K, TANIGUCHI T, CROMMIE MF, ZETTL A
  • 作者关键词:  
  • 出版物名称:   APPLIED PHYSICS LETTERS
  • ISSN:   0003-6951 EI 1077-3118
  • 通讯作者地址:   Univ Calif Berkeley
  • 被引频次:   252
  • DOI:   10.1063/1.3599708
  • 出版年:   2011

▎ 摘  要

Chemical vapor deposited (CVD) graphene is often presented as a scalable solution to graphene device fabrication, but to date such graphene has exhibited lower mobility than that produced by exfoliation. Using a boron nitride underlayer, we achieve mobilities as high as 37 000 cm(2)/V s, an order of magnitude higher than commonly reported for CVD graphene and better than most exfoliated graphene. This result demonstrates that the barrier to scalable, high mobility CVD graphene is not the growth technique but rather the choice of a substrate that minimizes carrier scattering. (C) 2011 American Institute of Physics. [doi:10.1063/1.3599708]