• 文献标题:   Investigation of the stability of graphene devices for quantum resistance metrology at direct and alternating current
  • 文献类型:   Article
  • 作  者:   CHAE DH, KRUSKOPF M, KUCERA J, PARK J, TRAN NTM, KIM DB, PIERZ K, GOTZ M, YIN YF, SVOBODA P, CHROBOK P, COUEDO F, SCHOPFER F
  • 作者关键词:   quantum hall effect, quantized hall resistance, graphene, impedance standard, f4tcnq doping, stability
  • 出版物名称:   MEASUREMENT SCIENCE TECHNOLOGY
  • ISSN:   0957-0233 EI 1361-6501
  • 通讯作者地址:  
  • 被引频次:   4
  • DOI:   10.1088/1361-6501/ac4a1a
  • 出版年:   2022

▎ 摘  要

Interlaboratory comparisons of the quantized Hall resistance (QHR) are essential to verify the international coherence of primary impedance standards. Here, we report on the investigation of the stability of p-doped graphene-based QHR devices at direct and alternating currents at CMI, KRISS, and PTB. To improve the stability of the electronic transport properties of the polymer-encapsulated devices, they were shipped in an over-pressurized transport chamber. The agreement of the quantized resistance with R (K)/2 at direct current was on the order of 1 n omega omega(-1) between 3.5 and 7.5 T at a temperature of 4.2 K despite changes in the carrier density during the shipping of the devices. At alternating current, the quantized resistance was realized in a double-shielded graphene Hall device. Preliminary measurements with digital impedance bridges demonstrate the good reproducibility of the quantized resistance near the frequency of 1 kHz within 0.1 mu omega omega(-1) throughout the international delivery.