• 文献标题:   Dual-wavelength ultraviolet photodetector based on vertical (Al,Ga)N nanowires and graphene*
  • 文献类型:   Article
  • 作  者:   ZHOU M, ZHAO YK, BIAN LF, ZHANG JY, YANG WX, WU YY, XING ZW, JIANG M, LU SL
  • 作者关键词:   dualwavelength ultraviolet photodetector, al, ga n nanowire, graphene, molecular beam epitaxy
  • 出版物名称:   CHINESE PHYSICS B
  • ISSN:   1674-1056 EI 2058-3834
  • 通讯作者地址:  
  • 被引频次:   4
  • DOI:   10.1088/1674-1056/abff23
  • 出版年:   2021

▎ 摘  要

Due to the wide application of UV-A (320 nm-400 nm) and UV-C (200 nm-280 nm) photodetectors, dual-wavelength (UV-A/UV-C) photodetectors are promising for future markets. A dual-wavelength UV photodetector based on vertical (Al,Ga)N nanowires and graphene has been demonstrated successfully, in which graphene is used as a transparent electrode. Both UV-A and UV-C responses can be clearly detected by the device, and the rejection ratio (R (254 nm)/R (450 nm)) exceeds 35 times at an applied bias of -2 V. The short response time of the device is less than 20 ms. Furthermore, the underlying mechanism of double ultraviolet responses has also been analyzed systematically. The dual-wavelength detections could mainly result from the appropriate ratio of the thicknesses and the enough energy band difference of (Al,Ga)N and GaN sections.