• 文献标题:   Investigation of graphene piezoresistors for use as strain gauge sensors
  • 文献类型:   Article
  • 作  者:   CHEN X, ZHENG XH, KIM JK, LI XX, LEE DW
  • 作者关键词:   graphene, nanoelectromechanical device, photolithography, piezoresistive device, resistor, strain gauge
  • 出版物名称:   JOURNAL OF VACUUM SCIENCE TECHNOLOGY B
  • ISSN:   2166-2746
  • 通讯作者地址:   Chonnam Natl Univ
  • 被引频次:   22
  • DOI:   10.1116/1.3660784
  • 出版年:   2011

▎ 摘  要

The primary objective of this research is to fabricate a graphene-based piezoresistive strain gauge and characterize its sensitivity. The strain gauge consists of mechanically exfoliated graphene sheets and electrical electrodes located on a silicon wafer. Instead of using e-beam lithography, which is the most widely applied methods in experimental studies of graphene, a new fabrication method utilizing conventional photolithography was used to easily fabricate a new nanoelectromechanical system strain gauge. The proposed fabrication technique is easy and only requires a few types of microfabrication equipment, thereby opening up a new way to broadly spread and facilitate associated graphene research, especially for those laboratories with limited resources. To characterize the piezoresistive sensitivity of the graphene-based strain gauge, a strain-detection system built by an equivalent-stress macrocantilever was set up to generate mechanical bending strain where a calibrated commercial strain gauge was packaged to display the generated strain. Utilizing this measurement setup, the electrical properties of the graphene-based piezoresistive strain gauge were reliably investigated. A high gauge factor of similar to 150 was experimentally measured with the graphene device, which promises a new strain gauge of high sensitivity. (C) 2011 American Vacuum Society. [DOI: 10.1116/1.3660784]