▎ 摘　　要

We demonstrate a controlled growth of nitrogen doped graphene layers by liquid precursor based chemical vapor deposition (CVD) technique Nitrogen doped graphene was grown directly on Cu current collectors and studied for its reversible Li ion intercalation properties Reversible discharge capacity of N dope graphene is almost double compared to pristine graphene due to the large number of surface defects induced due to N-doping All the graphene films were characterized by Raman spectroscopy, transmission electron microscopy, and X ray photoemission spectroscopy Direct growth of active electrode material on current collector substrates makes this a feasible and efficient process for integration into current battery manufacture technology