▎ 摘　　要

In this study, we have demonstrated nonvolatile memory devices using graphene quantum-dots (GQDs) trap layers with indium zinc oxide (IZO) semiconductor channel. The Fermi-level of GQD was effectively modulated by tunneling electrons near the Dirac point because of limited density of states and weak electrostatic screening in monolayer graphene. As a result, large gate modulation was driven in IZO channel to achieve a subthreshold swing of 5.21 V/dec (300 nm SiO2 gate insulator), while Au quantum-dots memory shows 15.52 V/dec because of strong electrostatic screening in metal quantum-dots. Together, discrete charge traps of GQDs enable stable performance in the endurance test beyond 800 cycles of programming and erasing. Our study suggests the exciting potential of GQD trap layers to be used for a highly promising material in non-volatile memory devices. (C) 2015 AIP Publishing LLC.