• 文献标题:   Gates controlled parallel-coupled double quantum dot on both single layer and bilayer graphene
  • 文献类型:   Article
  • 作  者:   WANG LJ, GUO GP, WEI D, CAO G, TU T, XIAO M, GUO GC, CHANG AM
  • 作者关键词:  
  • 出版物名称:   APPLIED PHYSICS LETTERS
  • ISSN:   0003-6951 EI 1077-3118
  • 通讯作者地址:   Chinese Acad Sci
  • 被引频次:   18
  • DOI:   10.1063/1.3638471
  • 出版年:   2011

▎ 摘  要

We present quantum transport measurements of gates controlled parallel-coupled double quantum dot (PDQD) device on both bilayer and single layer graphenes. The interdot coupling strength can be effectively tuned from weak to strong by in-plane plunger gates. All the relevant energy scales and parameters can be extracted from the honeycomb charge stability diagrams. The present method of designing and fabricating graphene PDQD is demonstrated to be general and reliable and will enhance the realization of graphene nanodevice and desirable study of rich PDQD physical phenomena in graphene. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3638471]