▎ 摘　　要

The detection in the THz band is significant due to practical importance in various fields requiring high sensitivity, detection accuracy, and cost reduction. The structures based on graphene/superconductor cause a significant increase in the supercurrent thanks to the inherent and unique properties of graphene, such as high mobility and density of the carriers in the tunneling process. In the meantime, due to its flexibility in controlling performance and compatibility with large-scale integration, the field effect transistor has been transformed to one of the best options for the implementation of tunabe THz detectors. Therefore, in this study, a graphene Bolometer detector based on a field effect transistor is proposed. The influence of various parameters such as temperature and gate voltage on the V-I characteristic was investigated. Thermal conductivity, equivalent noise power and coupling radiated power were evaluated. The calculations indicate high precision of low noise and optimal response to temperature variations.