• 文献标题:   Strong metal adatom-substrate interaction of Gd and Fe with graphene
  • 文献类型:   Article
  • 作  者:   HUPALO M, BINZ S, TRINGIDES MC
  • 作者关键词:  
  • 出版物名称:   JOURNAL OF PHYSICSCONDENSED MATTER
  • ISSN:   0953-8984 EI 1361-648X
  • 通讯作者地址:   Iowa State Univ
  • 被引频次:   35
  • DOI:   10.1088/0953-8984/23/4/045005
  • 出版年:   2011

▎ 摘  要

Graphene is a unique 2D system of confined electrons with an unusual electronic structure of two inverted Dirac cones touching at a single point, with high electron mobility and promising microelectronics applications. The clean system has been studied extensively, but metal adsorption studies in controlled experiments have been limited; such experiments are important to grow uniform metallic films, metal contacts, carrier doping, etc. Two non-free-electron-like metals (rare earth Gd and transition metal Fe) were grown epitaxially on graphene as a function of temperature T and coverage theta. By measuring the nucleated island density and its variation with growth conditions, information about the metal-graphene interaction (terrace diffusion, detachment energy) is extracted. The nucleated island densities at room temperature (RT) are stable and do not coarsen, at least up to 400 degrees C, which shows an unusually strong metal-graphene bond; most likely it is a result of C atom rebonding from the pure graphene sp(2) C-C configuration to one of lower energy.