• 文献标题:   Defect Repair of Thermally Reduced Graphene Oxide by Gold Nanoparticles as a p-Type Transparent Conductor
  • 文献类型:   Article
  • 作  者:   ABDULLAH MF
  • 作者关键词:   defect repair, reduced graphene oxide, gold predecoration, raman peak fitting, ptype transparent conductor
  • 出版物名称:   JOURNAL OF ELECTRONIC MATERIALS
  • ISSN:   0361-5235 EI 1543-186X
  • 通讯作者地址:  
  • 被引频次:   9
  • DOI:   10.1007/s11664-021-09198-8 EA SEP 2021
  • 出版年:   2021

▎ 摘  要

Reduced graphene oxide (rGO) is among only a few p-type transparent conductors. This article describes the use of pre-decoration of gold nanoparticles (AuNPs) to tune the optoelectronic properties of rGO film. High-purity Au is sputtered on GO film before the thermal reduction process at 825 degrees C in a H-2/CH4 environment. For the optimum 30 s Au sputtering, a high-temperature process transformed the Au nanoballs into nanowires. These conditions resulted in the maximum hole mobility of 158.99 cm(2) V-1 s(-1) and the minimum sheet resistance of 325.82 Omega square(-1). The degree of reduction for the rGO-Au(30s) sample was the highest, since it had the lowest optical transmittance of 0.871 and the lowest bandgap of 3.75 eV. It thus represents the best p-type transparent conductor, with a figure of merit sigma(dc)/sigma(op) of approximately 8.11. The deconvoluted Raman fit elaborates more on the elimination of defect components on the rGO samples. The integrated area ratio for several defect peaks over a pristine peak was the lowest for the rGO-Au(30s), at 3.98. The AuNPs intervened in the reduction process by repairing the lattice defects for the in-plane carbon sp(2), edge, amorphous phase, and out-of-plane sp(2)-sp(3). This was responsible for the great improvement in the carrier transport mechanism and the value of sigma(dc)/sigma(op). [GRAPHICS]