▎ 摘　　要

We present a 3-D semiclassical Monte Carlo simulator for modeling transport in graphene metal-oxide-semiconductor field-effect transistors (MOSFETs). We have calibrated our material simulations by matching simulation results to experimental bulk velocity-field curves. We have included a full range of phonon-scattering mechanisms, intrinsic and oxide/extrinsic remote impurity charges, and carrier-carrier interactions from classical electrostatics. We have modeled Klein tunneling and, in device simulations, treated charged impurities as localized Coulomb centers within the self-consistent potential function rather than through a scattering rate approximation. The necessity of these latter two treatments is demonstrated through simulations of 80-nm channel-length graphene MOSFETs.