1. 平台首页
  2. 国际论文信息
  • 文献标题:   Engineering and metrology of epitaxial graphene
  • 文献类型:   Article
  • 作　　者:   TZALENCHUK A, LARAAVILA S, CEDERGREN K, SYVAJARVI M, YAKIMOVA R, KAZAKOVA O, JANSSEN TJBM, MOTHPOULSEN K, BJORNHOLM T, KOPYLOV S, FAL KO V, KUBATKIN S
  • 作者关键词:   graphene, quantum hall effect, photochemical gate, metrology
  • 出版物名称:   SOLID STATE COMMUNICATIONS
  • ISSN:   0038-1098
  • 通讯作者地址:   Natl Phys Lab
  • 被引频次:   15
  • DOI:   10.1016/j.ssc.2011.05.020
  • 出版年:   2011

▎ 摘　　要

Here we review the concepts and technologies, in particular photochemical gating, which contributed to the recent progress in quantum Hall resistance metrology based on large scale epitaxial graphene on silicon carbide. Crown Copyright (C) 2011 Published by Elsevier Ltd. All rights reserved.