▎ 摘　　要

Nonvolatile rewritable memory devices were fabricated from the composite films of poly(3,4-ethylenedioxythiophene) (PEDOT) grown on a graphene oxide (GO) substrate. Photopolymerization which used GO as the reaction initiator was carried out for preparing the GO-PEDOT composite films of the bilayer structure. The composite films were analyzed by specular reflection infrared spectroscopy, Raman, atomic force microscopy, field-emission scanning electron microscopy coupled with energy-dispersive X-ray analysis and thermogravimetric analysis. The electronic properties of the as-prepared GO-PEDOT composite films were revealed by solid-phase ultraviolet photoelectron spectroscopy and X-ray photoelectron spectroscopy. Fabricated from the composite films, the ITO/GO-PEDOT/Al device exhibits nonvolatile rewritable memory of high performance with an ON/OFF current ratio of 3 x 10(4) and turn-on voltage of 1.5 V. The current-voltage characteristics and resistance-temperature dependence at different resistance levels are discussed. The resistance of the OFF state presents negative temperature dependence, indicating a typical semiconductor property. The resistance of the ON state is found to increase with increasing temperature, indicating a metallic behavior.