• 文献标题:   Ni induced few-layer graphene growth at low temperature by pulsed laser deposition
  • 文献类型:   Article
  • 作  者:   WANG K, TAI G, WONG KH, LAU SP, GUO W
  • 作者关键词:  
  • 出版物名称:   AIP ADVANCES
  • ISSN:   2158-3226
  • 通讯作者地址:   Hong Kong Polytech Univ
  • 被引频次:   42
  • DOI:   10.1063/1.3602855
  • 出版年:   2011

▎ 摘  要

We have used pulsed laser deposition to fabricate graphene on catalytic nickel thin film at reduced temperature of 650 degrees C. Non-destructive micro-Raman spectroscopic study on our samples, measuring 1x1 cm(2) each, has revealed few-layer graphene formation. Bi-, tri-, and few-layer graphene growth has been verified by High Resolution Transmission Electron Microscopy. Our experimental results imply that the number of graphene layers formation relies on film thickness ratios of C to Ni, which can be well controlled by varying the laser ablation time. This simple and low temperature synthesizing method is excellent for graphene based nanotechnology research and device fabrication. Copyright 2011 Author(s). This article is distributed under a Creative Commons Attribution 3.0 Unported License. [doi:10.1063/1.3602855]