• 文献标题:   Variability Effects in Graphene: Challenges and Opportunities for Device Engineering and Applications
  • 文献类型:   Article
  • 作  者:   XU GY, ZHANG YG, DUAN XF, BALANDIN AA, WANG KL
  • 作者关键词:   device engineering, device scalability, edge disorder, graphene, interface trap, lowfrequency noise, metrology, sensing application, variability effect
  • 出版物名称:   PROCEEDINGS OF THE IEEE
  • ISSN:   0018-9219 EI 1558-2256
  • 通讯作者地址:   Harvard Univ
  • 被引频次:   19
  • DOI:   10.1109/JPROC.2013.2247971
  • 出版年:   2013

▎ 摘  要

Variability effects in graphene can result from the surrounding environment and the graphene material itself, which form a critical issue in examining the feasibility of graphene devices for large-scale production. From the reliability and yield perspective, these variabilities cause fluctuations in the device performance, which should be minimized via device engineering. From the metrology perspective, however, the variability effects can function as novel probing mechanisms, in which the "signal fluctuations'' can be useful for potential sensing applications. This paper presents an overview of the variability effects in graphene, with emphasis on their challenges and opportunities for device engineering and applications. The discussion can extend to other thin-film, nanowire, and nanotube devices with similar variability issues, forming general interest in evaluating the promise of emerging technologies.