▎ 摘　　要

Recently, nanocomposite materials that consist of chitosan (CS) and graphene oxide (GO) have received immense attention in many fields of research, such as biomedicine, environmental studies, energy and electronics. In this paper, we study resistive memory devices in capacitor-like Ag/CS-GO/FTO structures, with the CS-GO nanocomposites acting as the memory layer. The devices showed a bipolar resistive-switching effect under an external electric field, with the endurance of 10(3) and ON/OFF ratio around 10(2). The calculated results confirmed by using density-function-theory (DFT) calculations show the stability of CS-GO nanocomposites through the presence of peptide and hydrogen bonds. Moreover, the calculated HOMO-LUMO gap (HLG) of GO is within the HLG of CS, so several unoccupied levels of GO can serve as electron traps in CS-GO nanocomposites. Based on these results above, a resistive-switching mechanism in Ag/CS-GO/FTO devices can be proposed because of the trap/de-trap process of injected electrons under external electric field.