• 文献标题:   On the Extended Holstein-Hubbard Model for Epitaxial Graphene on Metal
  • 文献类型:   Article
  • 作  者:   DAVYDOV SY
  • 作者关键词:  
  • 出版物名称:   SEMICONDUCTORS
  • ISSN:   1063-7826 EI 1090-6479
  • 通讯作者地址:   Ioffe Inst
  • 被引频次:   3
  • DOI:   10.1134/S1063782618020033
  • 出版年:   2018

▎ 摘  要

A model that combines the extended Hubbard model involving intra-atomic and interatomic Coulomb repulsion and the Holstein model describing the interaction of a band electron with an Einstein phonon is proposed. Three regions of the phase diagram are considered. The regions correspond to the states of spin- and charge-density waves and the state uniform in spin and charge. Numerical estimations for the Rh, Ir, and Pt substrates show that Coulomb interaction plays a leading part, making possible transitions from the uniform state to the states of spin- and charge-density waves.