• 文献标题:   Monolithically Patterned Wide-Narrow-Wide All-Graphene Devices
  • 文献类型:   Article
  • 作  者:   UNLUER D, TSENG F, GHOSH AW, STAN MR
  • 作者关键词:   device simulation, graphene circuit, graphene field effect transistor, graphene nanoribbon gnr, nonequilibrium green s function negf, quantum transport
  • 出版物名称:   IEEE TRANSACTIONS ON NANOTECHNOLOGY
  • ISSN:   1536-125X EI 1941-0085
  • 通讯作者地址:   Univ Virginia
  • 被引频次:   13
  • DOI:   10.1109/TNANO.2010.2060348
  • 出版年:   2011

▎ 摘  要

We investigate theoretically the performance advantages of all-graphene nanoribbon field-effect transistors (GNRFETs) whose channel and source/drain (contact) regions are patterned monolithically from a 2-D single sheet of graphene. In our simulated devices, the source/drain and interconnect regions are composed of wide GNR sections that are semimetallic, while the channel regions consist of narrow GNR sections that open semiconducting bandgaps. Our simulation employs a fully atomistic model of the device, contact, and interfacial regions using tight-binding theory. The electronic structures are coupled with a self-consistent 3-D Poisson's equation to capture the nontrivial contact electrostatics, along with a quantum kinetic formulation of transport based on nonequilibrium Green's functions. Although we only consider a specific device geometry, our results establish several general performance advantages of such monolithic devices (besides those related to fabrication and patterning), namely, the improved electrostatics, suppressed short-channel effects, and Ohmic contacts at the narrow-to-wide interfaces.