▎ 摘　　要

We study the positive and negative bias-temperature instabilities (PBTI and NBTI) on the back gate of single-layer double-gated graphene field-effect transistors (GFETs). By analyzing the resulting degradation at different stress times and oxide fields we show that there is a significant asymmetry between PBTI and NBTI with respect to their dependences on these parameters. Finally, we compare the results obtained on the high-k top gate and SiO2 back gate of the same device and show that SiO2 gate is more stable with respect to BTI. (C) 2016 The Japan Society of Applied Physics