▎ 摘　　要

We theoretically investigate negative differential resistance (NDR) of massless and massive Dirac Fermions in double barrier resonant tunneling diodes based on sufficiently short and wide graphene strips. The current-voltage characteristics calculated in a rotated pseudospin space show that the NDR feature only presents with appropriate structural parameters for the massless case, and the peak-to-valley current ratio can be enhanced exponentially by a tunable band gap. Remarkably, the lowest NDR operation window is nearly structure-free and can be almost solely controlled by a back gate, which may have potential applications in NDR devices with the operation window as a crucial parameter. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4794952]