• 文献标题:   Graphene-Modified Tin Dioxide for Efficient Planar Perovskite Solar Cells with Enhanced Electron Extraction and Reduced Hysteresis
  • 文献类型:   Article
  • 作  者:   ZHU MH, LIU WW, KE WJ, XIE LS, DONG P, HAO F
  • 作者关键词:   graphene ink, lowtemperature proces, trap state, charge recombination, stability
  • 出版物名称:   ACS APPLIED MATERIALS INTERFACES
  • ISSN:   1944-8244 EI 1944-8252
  • 通讯作者地址:   Univ Elect Sci Technol China
  • 被引频次:   22
  • DOI:   10.1021/acsami.8b15665
  • 出版年:   2019

▎ 摘  要

Tin dioxide (SnO2) as an efficient electron transport layer (ETL) has been demonstrated for emerging high-performance organic-inorganic hybrid perovskite solar cells (PSCs). However, the low-temperature solution-processed SnO2 usually results in high trap-state density and current-voltage hysteresis. Here, we reported an effective strategy to solve this problem by incorporating graphene ink into the low-temperature processed SnO2 for planar structure PSCs. The electron extraction efficiency has been significantly improved with graphene-doped SnO2 ETL coupled with attenuated charge recombination at the ETL/perovskite interface. The power conversion efficiency (PCE) of PSCs based on the graphene-SnO2 ETL reached over 18% with negligible hysteresis. Incorporation of graphene into the ETL layer also enhanced the device stability retaining 90% of the initial PCE value after storing in ambient condition with a relative humidity of 40 +/- 5% for 300 h. Our results provide an important insight into further efficiency boost in SnO2-based low-temperature processed PSCs.