▎ 摘　　要

One of the major obstacles for integration of PbSe with Si-based electronics is the significant lattice mismatch between PbSe and Si. The rigid limitation on lattice-matching could be effectively loosened via the van der Waals growth strategy, in which as-grown film layer and underlying substrate are held together through the weak van der Waals interaction rather than the strong chemical bonds. Benefiting from the absence of dangling-bond at their surface, graphene and layered Bi2Se3 are two potential van der Waals materials for the relaxation of lattice mismatch between PbSe and Si. In this work, PbSe thin films were grown on surface of graphene and Bi2Se3 with the molecular beam epitaxy. A potential solution for the relaxation on lattice mismatch between PbSe and Si is thus explored.