• 文献标题:   Ternary Full Adder Using Multi-Threshold Voltage Graphene Barristors
  • 文献类型:   Article
  • 作  者:   HEO S, KIM S, KIM K, LEE H, KIM SY, KIM YJ, KIM SM, LEE HI, LEE S, KIM KR, KANG S, LEE BH
  • 作者关键词:   graphene barristor, ternary full adder, multi threshold voltage ternary graphene barristor, ternary logic
  • 出版物名称:   IEEE ELECTRON DEVICE LETTERS
  • ISSN:   0741-3106 EI 1558-0563
  • 通讯作者地址:   Gwangju Inst Sci Technol
  • 被引频次:   8
  • DOI:   10.1109/LED.2018.2874055
  • 出版年:   2018

▎ 摘  要

Ternary logic circuit has been studied for several decades because it can provide simpler circuits and subsequently lower power consumption via succinct interconnects. We demonstrated a ternary full adder exhibiting a low power-delay-product of similar to 10(-16) J, which is comparable to the binary equivalent circuit. The ternary full adder was modeled using device parameters extracted from the experimentally demonstrated multi-V-th ternary graphene barristors.