• 文献标题:   Direct Graphene Synthesis on Lithium Niobate Substrate by Carbon Ion Implantation
  • 文献类型:   Article
  • 作  者:   XU YH, LU F, LIU KJ, MA CD
  • 作者关键词:   graphene, direct synthesi, lithium niobate substrate, carbon ion implantation, nickel film, annealing
  • 出版物名称:   FRONTIERS IN MATERIALS
  • ISSN:   2296-8016
  • 通讯作者地址:   Shandong Univ
  • 被引频次:   0
  • DOI:   10.3389/fmats.2020.572280
  • 出版年:   2020

▎ 摘  要

For this study, a dozen-micron-scale four to seven layers of graphene were synthesized directly onto Lithium Niobate (LiNbO3, LN) by carbon implantation in a nickel covered LiNbO3 film. The 1.52E16 ions center dot cm(-2) carbon ions of 80 keV were implanted into the nickel film to a depth of 100 nm, which is close to the interface between the nickel film and the LiNbO3. The implanted carbon atoms dissolved in nickel at an elevated temperature and diffused towards the interface between the nickel film and LiNbO3 during annealing. After the nickel film fell off, the graphene material was found by Raman spectroscopy and confirmed by the Atomic Force Microscope topographic image. This implantation combined with patterned metal film suggests possibilities for engineering two-dimensional graphene with special confinement. It also provides a valuable and novel way for integrating graphene-wafer structure for other available substrate wafer in microelectronics and photonics devices.