▎ 摘　　要

We calculate the theoretical contribution to the doping and temperature (T ) dependence of electrical resistivity due to scattering by acoustic phonons in Bernal bilayer graphene (BBG) and rhombohedral trilayer graphene (RTG). We focus on the role of nontrivial geometric features of the detailed, anisotropic k center dot p band structures of these systems-e.g., Van Hove singularities, Lifshitz transitions, Fermi surface anisotropy, and band curvature near the gap-whose effects on transport have not yet been systematically studied. We find that these geometric features strongly influence the temperature and doping dependencies of the resistivity. In particular, the band geometry leads to a nonlinear T dependence in the high -T equipartition regime, complicating the usual T4 to T Bloch-Gruneisen crossover. Our focus on BBG and RTG is motivated by recent experiments in these systems that have discovered several exotic low -T superconductivity proximate to complicated hierarchies of isospin-polarized phases. These interaction-driven phases are intimately related to the geometric features of the band structures, highlighting the importance of understanding the influence of band geometry on transport. While resolving the effects of the anisotropic band geometry on the scattering times requires nontrivial numerical solution, our approach is rooted in intuitive Boltzmann theory. We compare our results with recent experiments and discuss how our predictions can be used to elucidate the relative importance of various scattering mechanisms in these systems.