• 文献标题:   Pressure-induced reentrant Dirac semimetallic phases in twisted bilayer graphene
  • 文献类型:   Article
  • 作  者:   SANCHEZOCHOA F, RUBIOPONCE A, LOPEZURIAS F
  • 作者关键词:  
  • 出版物名称:   PHYSICAL REVIEW B
  • ISSN:   2469-9950 EI 2469-9969
  • 通讯作者地址:  
  • 被引频次:   0
  • DOI:   10.1103/PhysRevB.107.045414
  • 出版年:   2023

▎ 摘  要

External hydrostatic pressure (P) is another controllable and clean knob to tune the energy position of van Hove singularities in twisted bilayer graphene (TBLG), besides the interlayer rotation angle (theta). Based on total energy density functional theory calculations, we report here the ground-state properties of high-angle TBLG with two families due to their even and odd sublattice-exchange parity, hereafter parity for simplicity, under vertical hydrostatic P. Even (odd) parity refers to rotate one layer with respect to the other in a bilayer graphene with stacking AA (AB). We observed a Dirac semimetal (0-20 GPa) semiconductor (20-70 GPa) phase transition at theta = 21.8 degrees and 13.4 degrees; however, a reentrant Dirac semimetallic phase is observed for theta = 9.4 degrees and P 70 GPa whenever TBLG has even parity. Meanwhile, TBLG systems with odd parity and different theta remain metallic but with an enhanced trigonal warping for P > 50 GPa. Indeed, the semiconductor phase is only present for high theta. The phase transition in TBLG with even parity and the metallic character of TBLG with odd parity are due to band inversion effect assisted by a band-to-band repulsion mechanism shown by unfolded bands. This work shows the relevance of external P and parity in TBLG electronic structure and their possible implications in experiments.