• 文献标题:   Control of Electronic Structure of Graphene by Various Dopants and Their Effects on a Nanogenerator
  • 文献类型:   Article
  • 作  者:   SHIN HJ, CHOI WM, CHOI D, HAN GH, YOON SM, PARK HK, KIM SW, JIN YW, LEE SY, KIM JM, CHOI JY, LEE YH
  • 作者关键词:  
  • 出版物名称:   JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
  • ISSN:   0002-7863
  • 通讯作者地址:   Samsung Adv Inst Technol
  • 被引频次:   199
  • DOI:   10.1021/ja105140e
  • 出版年:   2010

▎ 摘  要

It is essential to control the electronic structure of graphene in order to apply graphene films for use in electrodes. We have introduced chemical dopants that modulate the electronic properties of few-layer graphene films synthesized by chemical vapor deposition. The work function, sheet carrier density, mobility, and sheet resistance of these films were systematically modulated by the reduction potential values of dopants. We further demonstrated that the power generation of a nanogenerator was strongly influenced by the choice of a graphene electrode with a modified work function. The off-current was well quenched in graphene films with high work functions (Au-doped) due to the formation of high Schottky barrier heights, whereas leakage current was observed in graphene films with low work functions (viologen-doped), due to nearly ohmic contact.