▎ 摘　　要

We perform gate- and temperature-dependent low-frequency noise measurements on epitaxial graphene nanoribbons (epiGNRs) grown on the sidewalls of trenches etched in SiC substrates. We find that the measured noise spectra are dominated by 1/f noise, and the main source of the noise at high carrier densities is the long-range scatters (charge traps) at the epiGNR/gate-dielectric interface. Interestingly, our findings differentiate sidewall epiGNRs from previously studied lithographically patterned GNRs while exhibiting competitive noise characteristics similar to those in high-quality suspended graphene or graphene on hexagonal boron nitride substrates. These results provide confidence in potential epiGNR-based device applications in low-noise nanoelectronics.