• 文献标题:   Bilayer Graphene with Long-Range Scatterers Studied in a Self-Consistent Born Approximation
  • 文献类型:   Article
  • 作  者:   ANDO T
  • 作者关键词:   charged scatterer, impurity scattering, bilayer graphene, graphene, graphite, level broadening, dirac electron
  • 出版物名称:   JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN
  • ISSN:   0031-9015
  • 通讯作者地址:   Tokyo Inst Technol
  • 被引频次:   17
  • DOI:   10.1143/JPSJ.80.014707
  • 出版年:   2011

▎ 摘  要

The density of states and conductivity are calculated for scatterers with nonzero range in bilayer graphene within a self-consistent Born approximation. For scatterers with a Gaussian potential, the minimum conductivity at zero energy remains universal in the clean limit, but increases with disorder and becomes nonuniversal for long-range scatterers. For charged impurities, we use the Thomas-Fermi approximation for the screening effect. The minimum conductivity increases with impurity concentration but the dependence is not so considerable. When the excited conduction band starts to be populated by electrons, the conductivity increases due to the increase in the screening effect.