▎ 摘　　要

Atomic layer deposited high-k dielectrics with sputtered TiOx as the seeding layer have been explored for double layer graphene tunnel transistors. The subthreshold swing of these transistors is <100 mV/decade. Temperature-dependent measurements indicate defect-mediated tunneling through these dielectrics. However, the current symmetry can still be altered by engineering the tunnel barriers. Published by Elsevier B.V.