• 文献标题:   Graphene based quantum dots
  • 文献类型:   Article
  • 作  者:   ZHANG HG, HU H, PAN Y, MAO JH, GAO M, GUO HM, DU SX, GREBER T, GAO HJ
  • 作者关键词:  
  • 出版物名称:   JOURNAL OF PHYSICSCONDENSED MATTER
  • ISSN:   0953-8984
  • 通讯作者地址:   Chinese Acad Sci
  • 被引频次:   47
  • DOI:   10.1088/0953-8984/22/30/302001
  • 出版年:   2010

▎ 摘  要

Laterally localized electronic states are identified on a single layer of graphene on ruthenium by low temperature scanning tunneling spectroscopy (STS). The individual states are separated by 3 nm and comprise regions of about 90 carbon atoms. This constitutes a highly regular quantum dot-array with molecular precision. It is evidenced by quantum well resonances (QWRs) with energies that relate to the corrugation of the graphene layer. The dI/dV conductance spectra are modeled by a layer height dependent potential-well with a delta-function potential that describes the barrier for electron penetration into graphene. The resulting QWRs are strongest and lowest in energy on the isolated 'hill' regions with a diameter of 2 nm, where the graphene is decoupled from the surface.