• 文献标题:   Optically Rewritable Memory in a Graphene-Ferroelectric-Photovoltaic Heterostructure
  • 文献类型:   Article
  • 作  者:   KUNDYS D, CASCALES A, MAKHORT AS, MAJJAD H, CHEVRIER F, DOUDIN B, FEDRIZZI A, KUNDYS B
  • 作者关键词:  
  • 出版物名称:   PHYSICAL REVIEW APPLIED
  • ISSN:   2331-7019
  • 通讯作者地址:   Univ Strasbourg
  • 被引频次:   0
  • DOI:   10.1103/PhysRevApplied.13.064034
  • 出版年:   2020

▎ 摘  要

Achieving optical operation of logic elements, especially those that involve two-dimensional (2D) layers, could kick-start the long-awaited era of optical computing. However, efficient optical modulation of the electronic properties of 2D materials, including the rewritable memory effect, is currently lacking. Here we report all-optical control of the conductivity of graphene with write-erase operation yet under ultralow optical fluence. The competition between light-induced charge generation in a ferroelectric-photovoltaic substrate and relaxation processes provides the selective photocarrier-trapping control affecting the doping of the 2D overlayer. These findings open the way to photonic control of 2D devices for all-optical modulators, a variety of all-optical logic circuits, memories, and field-effect transistors.