▎ 摘　　要

The kinetics of surface graphitization during dissociative vacuum evaporation of silicon carbide, under the effect of a scanning heat source, is studied. A model of the process is developed. The model provides a means for theoretically treating the dynamics of formation and the number of residual carbon atomic layers. The vapor stoichiometric coefficient which ensures the minimization of the number of structural defects in graphene, is optimized at the sublimation temperature: theta = 1/eta(T (max)). The proposed method can be used as a basis for graphene production technology.