• 文献标题:   Biaxial Compressive Strain Engineering in Graphene/Boron Nitride Heterostructures
  • 文献类型:   Article
  • 作  者:   PAN W, XIAO JL, ZHU JW, YU CX, ZHANG G, NI ZH, WATANABE K, TANIGUCHI T, SHI Y, WANG XR
  • 作者关键词:  
  • 出版物名称:   SCIENTIFIC REPORTS
  • ISSN:   2045-2322
  • 通讯作者地址:   Nanjing Univ
  • 被引频次:   82
  • DOI:   10.1038/srep00893
  • 出版年:   2012

▎ 摘  要

Strain engineered graphene has been predicted to show many interesting physics and device applications. Here we study biaxial compressive strain in graphene/hexagonal boron nitride heterostructures after thermal cycling to high temperatures likely due to their thermal expansion coefficient mismatch. The appearance of sub-micron self-supporting bubbles indicates that the strain is spatially inhomogeneous. Finite element modeling suggests that the strain is concentrated on the edges with regular nano-scale wrinkles, which could be a playground for strain engineering in graphene. Raman spectroscopy and mapping is employed to quantitatively probe the magnitude and distribution of strain. From the temperature-dependent shifts of Raman G and 2D peaks, we estimate the TEC of graphene from room temperature to above 1000K for the first time.