• 文献标题:   Stochastic nonlinear electrical characteristics of graphene
  • 文献类型:   Article
  • 作  者:   SHIN YJ, GOPINADHAN K, NARAYANAPILLAI K, KALITSOV A, BHATIA CS, YANG H
  • 作者关键词:  
  • 出版物名称:   APPLIED PHYSICS LETTERS
  • ISSN:   0003-6951
  • 通讯作者地址:   Natl Univ Singapore
  • 被引频次:   4
  • DOI:   10.1063/1.4788737
  • 出版年:   2013

▎ 摘  要

A stochastic nonlinear electrical characteristic of graphene is reported. Abrupt current changes are observed from voltage sweeps between the source and drain with an on/off ratio up to 10(3). It is found that graphene channel experiences the topological change. Active radicals in an uneven graphene channel cause local changes of electrostatic potential. Simulation results based on the self-trapped electron and hole mechanism account well for the experimental data. Our findings illustrate an important issue of reliable electron transports and help for the understanding of transport properties in graphene devices. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4788737]